Towards molecular spintronics

Introduction to Dilute Magnetic Semiconductors

This paper begins with a brief introduction to the field of spintronics and dilute magnetic semiconductor (DMS), the second part discusses in detail on three typical DMS materials–(Ga,Mn)As, (Ga,Mn)N and Transition metal doped oxide. Next mechanism of DMS ferromagnetism along with its magneto transport properties are discussed. Following that, an important sample preparation technique in DMS– M...

Molecules for Spin Devices

Molecular electronics [1] aims to use molecules as building blocks for the fabrication of electronic components—diodes, switches, transistors, and the like. At the heart of this idea is the possibility of synthesizing organic molecules with tailored properties, manipulating their electronic structure and optimizing their binding to different surfaces. Devices as small as a few molecules might l...

Demonstration of CoFeB-MgO magnetic tunnel junctions with high thermal stability and low power consumption -Advancement towards high density spintronics based memories-

The research group of Professor Hideo Ohno of the Center for Spintronics Integrated Systems, the Research Institute of Electrical Communication, and the WPI Advanced Institute for Materials Research, together with ULVAC, successfully fabricated magnetic tunnel junctions with a diameter reduced to 11 nm. They demonstrated that high thermal stability and low power consumption can be simultaneousl...

Interface engineering of spin - tunnel contacts to silicon Towards silicon - based spintronic devices

Selected Papers

In semiconductor spintronics, electron spin rather than charge is the key property. This paper describes several spin-related devices using spin-orbit interaction. We have experimentally confirmed that the spin-orbit interaction in a semiconductor two-dimensional electron gas channel can be controlled by a gate voltage. This is the first step towards the creation of functional spin devices. The...